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SH8K32
? Electrical characteristics (Ta=25 ? C)
<It is the same characteristics for the Tr1 and Tr2.>
Data Sheet
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
± 10
Unit
μ A
Conditions
V GS = ± 20V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
60
?
?
V
I D = 1mA, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
I DSS
V GS (th)
R DS (on) ?
?
1.0
?
?
?
?
?
46
52
55
1
2.5
65
73
77
μ A
V
m Ω
m Ω
m Ω
V DS = 60V, V GS =0V
V DS = 10V, I D = 1mA
I D = 4.5A, V GS = 10V
I D = 4.5A, V GS = 4.5V
I D = 4.5A, V GS = 4.0V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Y fs
C iss
C oss
C rss
t d (on)
t r
t d (off)
t f
?
?
?
?
?
4.0
?
?
?
?
?
?
?
?
500
120
55
12
18
40
13
?
?
?
?
?
?
?
?
S
pF
pF
pF
ns
ns
ns
ns
V DS = 10V, I D = 4.5A
V DS = 10V
V GS =0V
f=1MHz
V DD 30V
I D = 2.3A
V GS = 10V
R L = 13 Ω
R G =10 Ω
Total gate charge
Q g
?
?
7.0
10
nC
V DD
30V, V GS = 5V
Gate-source charge
Gate-drain charge
Q gs
Q gd
?
?
?
?
1.6
2.5
?
?
nC
nC
I D = 4.5A
R L = 6.7 Ω , R G = 10 Ω
? Pulsed
? Body diode characteristics (Source-Drain) (Ta=25 ? C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Symbol
V SD ?
Min.
?
Typ.
?
Max.
1.2
Unit
V
Conditions
I S = 4.5A, V GS = 0V
? Pulsed
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2/4
2009.12 - Rev.A
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